AO6422
20V N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
= 250µA, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
T
J
= 55°
C
V
DS
= 0V, V
GS
= ±8V
V
DS
= V
GS
I
D
= 250µA
V
GS
= 4.5V, V
DS
= 5V
V
GS
= 4.5V, I
D
= 5.0A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°
C
V
GS
= 2.5V, I
D
= 4.5A
V
GS
= 1.8V, I
D
= 3.5A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
= 5V, I
D
= 5.0A
I
S
= 1A,V
GS
= 0V
0.4
30
35
48
43
55
14
0.8
1
2
450
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
74
52
4.9
6.2
V
GS
= 4.5V, V
DS
= 10V, I
D
= 5A
0.4
1.3
4.5
V
GS
=4.5V, V
DS
=10V, R
L
=2Ω,
R
GEN
=3Ω
I
F
=5A, dI/dt=100A/µs
6
33
7.1
13
3.3
17
7.5
8.2
560
44
60
55
72
0.65
Min
20
1
5
±100
1
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
= 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t
≤10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t
≤
300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev2: Feb. 2012
2/4
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