AO6422
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
= 10V
I
D
= 5A
4
Capacitance (pF)
V
GS
(Volts)
600
C
iss
400
800
3
2
1
200
C
oss
C
rss
0
5
10
15
20
0
0
1
2
3
4
5
6
7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
R
DS(ON)
limited
10µs
1000
T
J(Max)
=150°C
T
A
=25°C
10
1
1ms
10ms
100mss
10s
T
J(Max)
=150°C
T
A
=25°C
DC
Power (W)
100
I
D
(Amps)
100µs
100
10
0.1
0.01
0.1
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
I
F
=-6.5A, dI/dt=100A/µs
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
0.001
100
1000
T
on
T
4/4
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