AO8801A 参数 Datasheet PDF下载

AO8801A

20V P-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-20V, V

GS

=0V

C

T

J

=55°

V

DS

=0V, V

GS

= ±8V

V

DS

=V

GS

, I

D

=-250µΑ

V

GS

=-4.5V, V

DS

=-5V

V

GS

=-4.5V, I

D

=-4.5A

R

DS(ON)

Static Drain-Source On-Resistance

C

T

J

=125°

V

GS

=-2.5V, I

D

=-4A

V

GS

=-1.8V, I

D

=-3A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

=-5V, I

D

=-4.5A

I

S

=-1A,V

GS

=0V

-0.3

-30

35

49

43

54

20

-0.64

-1

-2

600

V

GS

=0V, V

DS

=-10V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

80

48

6

7.4

V

GS

=-4.5V, V

DS

=-10V, I

D

=-4.5A

0.8

1.3

V

GS

=-4.5V, V

DS

=-10V, R

L

=2.2Ω,

R

GEN

=3Ω

I

F

=-4.5A, dI/dt=500A/µs

20

40

751

115

80

13

9.3

1

2.2

13

9

19

29

26

51

32

62

905

150

115

20

11

1.2

3.1

42

59

54

68

-0.57

Min

-20

-1

-5

±10

-0.9

Typ

Max

Units

V

µA

µA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-4.5A, dI/dt=500A/µs

A. The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using

≤

10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°C.

D. The R

θJA

is the sum of the thermal impedance from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in

2

FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

2/5

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