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AOC2800 参数 Datasheet PDF下载

AOC2800图片预览
型号: AOC2800
PDF下载: 下载PDF文件 查看货源
内容描述: 常见的漏双N沟道增强型场效应晶体管 [Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 306 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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AOC2800
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
TEST CIRCUIT 1 Isss
POSITIVE VSS FOR ISSS+
NEGATIVE VSS FOR ISSS-
S2
TEST CIRCUIT 2 Igss1,2
POSITIVE VGS FOR IGSS1+
NEGATIVE VGS FOR IGSS1-
When FET1 is measured
G2
S2
A
D2
D1
VSS
between GATE and SOURCE
of FET2 are shorted
G2
D2
D1
G1
G1
A
S1
VG
S1
TEST CIRCUIT 3 Vgs
(
off
)
S2
When FET1 is measured
between GATE and SOURCE
of FET2 are shorted
G2
TEST CIRCUIT 4 Rss
(
on
)
S2
Vss/Is
A
D2
D1
VSS
G2
Is
D2
D1
G1
G1
V
VSS
VGS
S1
VGS
S1
TEST CIRCUIT 5 V
4.5V
F(SS)1,2
S2
TEST CIRCUIT 6 BV
POSITIVE VSS FOR ISSS+
NEGATIVE VSS FOR ISSS-
DSS
S2
When FET1 measured
FET2 VGS=4.5V
G2
I
F
D2
D1
G2
Is
D2
D1
G1
V
VSS
G1
V
VGS=0
S1
S1
TEST CIRCUIT 7 BV
POSITIVE VSS FOR ISSS+
NEGATIVE VSS FOR ISSS-
When FET1 is measured
GSO1,2
S2
between GATE and SOURCE
of FET2 are shorted
G2
D2
D1
G1
V
I
G
S1
5/5
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