AOD417
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
-I
D
(A), Peak Avalanche Current
100
80
T
A
=25°C
60
40
T
A
=150°C
20
0
0.000001
60
Power Dissipation (W)
I
D
=-10mA, V
GS
=0V
50
40
30
20
10
0
0.00001
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
30
25
Current rating
20
15
10
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
60
50
40
Power (W)
30
20
10
0
0.001
850
185
90
T
A
=25°C
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
0.001
0.00001
T
on
0.01
T
100
1000
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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