AOD418/AOI418
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
10V
120
100
I
D
(A)
80
60
40
20
0
0
1
2
3
V
GS
=3V
4
5
4V
7V
5V
80
4.5V
60
I
D
(A)
40
125°C
20
0
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
2
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
V
GS
=10V
I
D
=20A
25°C
100
V
DS
=5V
3.5V
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
R
DS(ON)
(mΩ)
8
6
4
2
V
GS
=10V
V
GS
=4.5V
17
5
2
V
GS
=4.5V
10
I
D
=20A
25
I
D
=20A
20
R
DS(ON)
(mΩ)
15
10
25°C
5
0
0
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage (Note E)
2
10
1.0E+02
1.0E+01
1.0E+00
I
S
(A)
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
40
3/6
www.freescale.net.cn