AOD424 参数 Datasheet PDF下载

AOD424

20V N-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=20V, V

GS

=0V

C

T

J

=55°

V

DS

=0V, V

GS

= ±12V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=4.5V, I

D

=20A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=2.5V, I

D

=20A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=20A

I

S

=1A,V

GS

=0V

G

Min

20

Typ

Max

Units

V

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

1

5

100

0.5

160

3.6

C

T

J

=125°

5.1

4.5

105

0.7

1

45

3080

3860

740

580

1.4

36

9

12

7

4630

960

810

2.1

43

4.4

6.2

5.7

1

1.6

µA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V

GS

=0V, V

DS

=0V, f=1MHz

V

GS

=0V, V

DS

=10V, f=1MHz

520

350

0.6

28

SWITCHING PARAMETERS

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

I

F

=20A, dI/dt=500A/µs

1in

2

V

GS

=10V, V

DS

=10V, I

D

=20A

V

GS

=10V, V

DS

=10V, R

L

=0.5Ω,

R

GEN

=3Ω

13

29

8

70

18

17

36

20

43

Body Diode Reverse Recovery Charge I

F

=20A, dI/dt=500A/µs

ns

nC

A. The value of R

θJA

is measured with the device mounted on

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D

is based on T

J(MAX)

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J

=25°C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)

=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C.

2/6

www.freescale.net.cn