AOD424
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
7000
6000
5000
4000
3000
2000
1000
0
VDS=10V
ID=20A
Ciss
Coss
Crss
0
10
20
Qg (nC)
30
40
0
5
10
15
20
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
10µs
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
100µs
17
5
2
1ms
10ms
DC
10
0.1
TJ(Max)=175°C
TC=25°C
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
0
18
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=1.5°C/W
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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