AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-20V
I
D
=-20A
8
Capacitance (pF)
2500
2000
1500
1000
C
rss
500
0
0
20
25
30
35
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
15
45
0
0
5
10
15
20
25
30
35
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
-V
GS
(Volts)
3500
3000
C
iss
6
4
2
1000
10000
T
J(Max)
=175°
C
100
-I
D
(Amps)
100µs
1ms
10ms
DC
10
Power (W)
R
DS(ON)
limited
10µs
1000
100
1
T
J(Max)
=175°C
T
C
=25°C
0.1
1
10
0.1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
Jc
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.4°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
150
mJ
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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