AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
Power Dissipation (W)
40
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
°
Figure 12: Power De-rating (Note B)
-Current rating I
D
(A)
50
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
°
Figure 13: Current De-rating (Note B)
10000
T
J(Max)
=150°
C
1000
Power (W)
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
T
on
T
5/6
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