AON2420
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
4.5V
60
40
4V
I
D
(A)
I
D
(A)
40
3.5V
20
20
V
GS
=3.0V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
16
R
DS(ON)
(mΩ)
Ω
12
8
4
0
0
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
Normalized On-Resistance
10
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
30
125°C
60
50
V
DS
=5V
1.6
V
GS
=4.5V
1.4
V
GS
=10V
I
D
=8A
1.2
V
GS
=4.5V
I
D
=6A
1
V
GS
=10V
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
30
±20
1.0E+01
25
I
D
=8A
20
125°C
R
DS(ON)
(mΩ)
Ω
15
I
S
(A)
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
10
25°C
5
25°C
0
0
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/5
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