AOT430
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOT430 uses advanced trench technology and design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Standard
Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications).
Features
V
DS
(V) = 75V
I
D
= 80 A
(V
GS
= 10V)
R
DS(ON)
< 11.5mΩ (V
GS
= 10V)
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
75
±25
80
78
200
45
300
268
134
-55 to 175
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
T
C
=100°C
G
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
B
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
Typ
45
0.45
Max
60
0.56
Units
°C/W
°C/W
1/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
