AOT430
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
40
80
120
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000
T
J(Max)
=175°C, T
C
=25°C
I
D
(A), Peak Avalanche Current
100
I
D
(Amps)
10µs
1ms
10
R
DS(ON)
limited
1
DC
10ms
150
125
100
75
50
25
0
0.000001
T
A
=25°C
T
A
=150°C
V
DS
=30V
I
D
=30A
Capacitance (nF)
8
6
C
iss
4
2
C
rss
0
0
30
45
V
DS
(Volts)
Figure 8: Capacitance Characteristics
15
60
C
oss
0.1
0.1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
1000
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 10: Single Pulse Avalanche capability
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.45°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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