AOTF450L
200V, 5.8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
10V
8
I
D
(A)
6
6.5V
4
6V
2
V
GS
=5.5V
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.0
Normalized On-Resistance
V
GS
=10V
4
3.5
3
2.5
2
1.5
1
0.5
0
0.0
0
2
4
6
8
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
-100
-50
0
50
100
150
200
V
GS
=10V
I
D
=2.9A
0.1
2
6
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
4
10
25°C
1
I
D
(A)
10
100
V
DS
=40V
-55°C
125°C
0.8
R
DS(ON)
(Ω)
Ω
0.6
0.4
0.2
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+00
1
I
S
(A)
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
0.8
-100
-50
0
50
100
150
200
T
J
(°C)
°
Figure 5:Break Down vs. Junction Temparature
1.0E-04
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/5
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