1000
TOP
1000
IRF/B/S/SL4310
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
10
4.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
10
100
0.1
1
4.5V
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 75A
VGS = 10V
2.5
100
TJ = 175°C
2.0
1.5
10
TJ = 25°C
VDS = 50V
1.0
≤
60µs PULSE WIDTH
1
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS = 80V
VDS= 50V
VDS= 20V
10000
16
C, Capacitance (pF)
Ciss
12
6000
8
4000
4
2000
Coss
Crss
1
10
100
0
0
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
3 / 11
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