SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.5
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
R
DS(on)
- On-Resistance
(Normalized)
I
D
= 50 A
V
DS
= 15 V
2.0
V
GS
= 10 V
6
1.5
V
GS
= 4.5 V
1.0
4
2
0
0
10
20
30
40
50
60
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.05
On-Resistance vs. Junction Temperature
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
0.04
T
J
= 150
°C
1
0.03
0.1
T
J
= - 50
°C
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.02
T
J
= 150
°C
T
J
= 25
°C
0.00
0
2
4
6
8
10
0.01
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
40
On-Resistance vs. Gate-to-Source Voltage
V
DS
- Drain-to-Source Voltage (V)
0.1
V
GS(th)
Variance (V)
38
I
D
= 10 mA
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
- 1.1
36
34
32
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
30
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4/9
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