SQD50P08-25L 参数 Datasheet PDF下载

SQD50P08-25L

Automotive P-Channel

80 V (D-S) 175 °C MOSFET

SPECIFICATIONS

(T

C

= 25 °C, unless otherwise noted)

PARAMETER

Static

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

V

DS

V

GS(th)

I

GSS

I

DSS

I

D(on)

V

GS

= 0 V, I

D

= - 250 μA

V

DS

= V

GS

, I

D

= - 250 μA

V

DS

= 0 V, V

GS

= ± 20 V

V

GS

= 0 V

V

GS

= 0 V

V

GS

= 0 V

V

GS

= - 10 V

V

GS

= - 10 V

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V

V

GS

= - 10 V

V

GS

= - 4.5 V

Forward Transconductance

b

Dynamic

b

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

c

Gate-Source Charge

c

Gate-Drain Charge

c

Gate Resistance

Turn-On Delay Time

c

Rise Time

c

Turn-Off Delay Time

c

Fall Time

c

Source-Drain Diode Ratings and

Pulsed Current

a

Forward Voltage

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Characteristics

b

I

SM

V

SD

I

F

= - 10.5 A, V

GS

= 0 V

-

-

-

- 0.82

- 120

- 1.5

A

V

V

DD

= - 40 V, R

L

= 3.2



I

D



- 12.5 A, V

GEN

= - 10 V, R

g

= 1



f = 1 MHz

V

GS

= - 10 V

V

DS

= - 40 V, I

D

= - 12.5 A

V

GS

= 0 V

V

DS

= - 25 V, f = 1 MHz

-

-

-

-

-

-

1.60

-

-

-

-

4279

356

239

91

8.2

24

3.26

10

11

71

16

5350

445

300

137

-

-

5.00

15

17

107

24

ns



nC

pF

g

fs

V

DS

= - 80 V

V

DS

= - 80 V, T

J

= 125 °C

V

DS

= - 80 V, T

J

= 175 °C

V

DS

-

5 V

I

D

= - 12.5 A

I

D

= - 12.5 A, T

J

= 125 °C

I

D

= - 12.5 A, T

J

= 175 °C

I

D

= - 10.5 A

- 80

- 1.5

-

-

-

-

- 50

-

-

-

-

-

-

- 2.0

-

-

-

-

-

0.020

-

-

0.025

38

-

- 2.5

± 100

-1

- 50

- 250

-

0.025

0.044

0.055

0.031

-

S



A

μA

V

nA

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

DS

= - 15 V, I

D

= - 12.5 A

Notes

a. Pulse test; pulse width



300 μs, duty cycle



2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.









Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.



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