SQD50P08-25L
Automotive P-Channel
80 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.5
I
D
= 12.5 A
2.1
V
GS
= 10 V
1.7
V
GS
= 4.5 V
8
I
D
= 12.5 A
V
DS
= 40 V
6
4
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
1.3
2
0.9
0
0
10
20
30
40
50
60
70
80
90
100
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.15
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.12
1
0.09
0.1
T
J
= 25
°C
0.06
T
J
= 150
°C
0.03
T
J
= 25
°C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
1.1
- 80
On-Resistance vs. Gate-to-Source Voltage
V
DS
- Drain-to-Source Voltage (V)
0.8
V
GS(th)
Variance (V)
I
D
= 250 μA
- 85
I
D
= 10 mA
0.5
I
D
= 5 mA
0.2
- 90
- 95
- 0.1
- 100
- 0.4
- 50 - 25
0
25
50
75
100
125
150
175
- 105
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4/9
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