SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
100
0.024
I
D
= 20 A
r
DS(on)
On-Resistance (W)
0.018
r
DS(on)
vs V
GS
vs. Temperature
I
S
– Source Current (A)
T
J
= 150_C
T
A
= 125_C
0.012
10
T
J
= 25_C
0.006
T
A
= 25_C
1
0.3
0.000
0.6
0.9
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
2.3
2.1
600
1.9
I
D
= 250
mA
V
GS(th)
– (V)
1.7
Power (W)
1.5
1.3
1.1
0.9
120
0.7
0.5
–50
0
0.001
480
720
Single Pulse Power, Junction-to-Ambient
T
A
= 25_C
360
240
–25
0
25
50
75
100
125
150
175
0.01
0.1
1
Time (sec)
10
100
1000
T
J
– Temperature (_C)
Safe Operating Area
1000
*Limited by r
DS(on)
100
1 ms
10
I
D
(A)
10 ms
100 ms
1
1
10
DC
0.10
0.01
T
A
= 25_C
Single Pulse
0.001
0.1
1
V
DS
(V)
10
100
*V
GS
u
minimum V
GS
at which r
DS(on)
is specified
4/7
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