TJ15P04M3
MOSFETs Silicon P-Channel MOS (U-MOS-H)
1. Applications
•
•
DC-DC Converters
Desktop Computers
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 28 mΩ (typ.) (V
GS
= -10 V)
Low leakage current: I
DSS
= -10
µA
(max) (V
DS
= -40 V)
Enhancement mode: V
th
= -0.8 to -2.0 V (V
DS
= -10 V, I
D
= -0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
T
ch
T
stg
Rating
-40
±20
-15
-45
29
29
-15
150
-55 to 150
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1/8
www.freescale.net.cn