6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 3)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= -40 V, V
GS
= 0 V
I
D
= -10 mA, V
GS
= 0 V
I
D
= -10 mA, V
GS
= 10 V
V
DS
= -10 V, I
D
= -0.1 mA
V
GS
= -4.5 V, I
D
= -7.5 A
V
GS
= -10 V, I
D
= -7.5 A
Min
-40
-30
-0.8
Typ.
37
28
Max
±0.1
-10
-2.0
48
36
mΩ
V
Unit
µA
Note 3: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
See Figure 6.2.1.
Test Condition
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
1100
130
170
11
19
42
170
Max
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈
-32 V, V
GS
= -10 V, I
D
= -15 A
Min
Typ.
26
6.7
2.5
Max
Unit
nC
25
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
(Note 4)
Symbol
I
DRP
V
DSF
I
DR
= -15 A, V
GS
= 0 V
Test Condition
Min
Typ.
Max
-45
1.2
Unit
A
V
Note 4: Ensure that the channel temperature does not exceed 150.
3/8
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