HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
7.
S-80720AL-AH-X, S-80720AN/AN-DH-X
S-80720SL-AH-X, S-80720SN-DH-X (Detection voltage : 1.952 to 2.048 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.000
2.048
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.25
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
1.952
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 3.0 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
8.
S-80721AL/AL-AJ-X, S-80721AN/AN-DJ-X
S-80721SL-AJ-X, S-80721SN-DJ-X (Detection voltage : 2.049 to 2.151 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.100
2.151
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.26
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.049
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 4.5 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
9.
S-80722AL/AL-AK-X, S-80722AN/AN-DK-X (Detection voltage : 2.147 to 2.253 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.200
2.253
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.28
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.147
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 4.5 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
Seiko Instruments Inc.
9
SII [ SEIKO INSTRUMENTS INC ]
