HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
19. S-80731AL/AL-AV-X, S-80731AN/AN-DV-X (Detection voltage : 3.025 to 3.175 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.025
-VDET
×0.02
3.100
-VDET
×0.05
1.0
3.175
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
∆-VDET
∆Ta
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.39
mV/°C
20. S-80731AH/AH-BV-X (Detection voltage : 3.025 to 3.175 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.025
-VDET
×0.02
3.100
-VDET
×0.05
1.0
3.175
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
4
1.0
0.03
15.0
Pch
V
VDD = 1.2 V
0.09
DS = 0.5 V
VDD = 2.4 V
0.15
4.06
0.30
8.36
Nch
VDD = 4.8 V
3
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.39
mV/°C
∆-VDET
∆Ta
21. S-80732AL/AL-AW-X, S-80732AN/AN-DW-X, S-80732SL-AW-X (Detection voltage : 3.123 to 3.277 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.123
-VDET
×0.02
3.200
-VDET
×0.05
1.0
3.277
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.40
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
13
SII [ SEIKO INSTRUMENTS INC ]
