ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
Rev.3.3
_00
S-809xxC Series
Electrical Characteristics
1. Nch Open-drain Output Products
Table 7
Item
Detection voltage
*1
Hysteresis width
Symbol
−V
DET
V
HYS
Condition
—
S-80913 to 14
S-80915 to 60
Current consumption
I
SS
V
DD
=2.0
V
V
DD
=3.5
V
V
DD
=4.5
V
V
DD
=6.0
V
V
DD
=7.5
V
S-80913 to 14
S-80915 to 26
S-80927 to 39
S-80940 to 54
S-80955 to 60
(Ta=25°C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
−V
DET(S)
−V
DET(S)
−V
DET(S)
V
1
×0.98
×1.02
−V
DET
−V
DET
−V
DET
×0.03
×0.05
×0.08
−V
DET
−V
DET
−V
DET
×0.03
×0.05
×0.07
—
1.0
2.5
2
µA
—
1.1
2.8
—
1.2
3.0
—
1.3
3.3
—
1.4
3.5
0.7
—
10.0
V
1
0.23
0.59
2.88
—
2.7
20
0.
64
Operating voltage
Output current
V
DD
I
OUT
Leakage current
Delay time
I
LEAK
t
D
—
Output transistor V
DD
=0.95
V
Nch, V
DS
=0.5
V S-80913 to 14
V
DD
=1.2
V
S-80915 to 60
V
DD
=2.4
V
S-80927 to 60
Output transistor,
Nch, V
DS
=10.0
V, V
DD
=10.0
V
V
DD
=2.0
V
C
D
=4.7
nF
S-80913 to 14
V
DD
=3.5
V
S-80915 to 26
V
DD
=4.5
V
S-80927 to 39
V
DD
=6.0
V
S-80940 to 54
V
DD
=7.5
V
S-80955 to 60
—
—
—
0.1
4.5
34
mA
3
1.36
4.98
—
3.6
27
µA
ms
4
∆ −
V
DET
ppm/
—
1
Ta=−40°C to
+85°C
±100
±350
°C
∆
Ta
• −
V
DET
*1.
−V
DET
:
Actual detection voltage,
−V
DET(S)
:
Specified detection voltage (The center value of detection voltage range in
Detection voltage
temperature coefficient
*2
Table 1.)
*2.
The temperature change ratio in the detection voltage
[mV/°C]
is calculated by using the following quation.
∆ −
V
DET
[
mV/
°
C
]
*1
= −
V
DET
(
Typ.
)
[
V
]
*2
× ∆ −
V
DET
[
ppm/
°
C
]
*3
÷
1000
∆
Ta
∆
Ta
•
−
V
DET
*1.
Temperature change ratio of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient
8
Seiko Instruments Inc.
SII [ SEIKO INSTRUMENTS INC ]
