C8051F336/7/8/9
Table 6.9. Temperature Sensor Electrical Characteristics
V
= 3.0 V, –40 to +85 °C unless otherwise specified.
DD
Parameter
Conditions
Min
Typ
Max
Units
Linearity
—
± 0.2
—
°C
Relative Accuracy
Slope
—
—
—
—
—
—
TBD
TBD
TBD
TBD
TBD
TBD
—
—
—
—
—
—
°C
mV/°C
µV/°C
mV
Slope Error*
Offset
Temp = 0 °C
Temp = 0 °C
Offset Error*
Power Supply Current
mV
µA
*Note: Represents one standard deviation from the mean.
Table 6.10. Voltage Reference Electrical Characteristics
V
= 3.0 V; –40 to +85 °C unless otherwise specified.
DD
Parameter
Conditions
Internal Reference (REFBE = 1)
25 °C ambient
Min
Typ
Max
Units
Output Voltage
2.35
—
2.42
—
2.50
10
V
VREF Short-Circuit Current
mA
VREF Temperature
Coefficient
—
30
—
ppm/°C
Load Regulation
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
—
—
—
—
3
—
—
—
—
µV/µA
ms
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
7.5
200
–0.6
µs
mV/V
External Reference (REFBE = 0)
Input Voltage Range
Input Current
0
—
V
V
DD
Sample Rate = 200 ksps; VREF = 3.0 V
—
TBD
—
µA
Power Specifications
REFBE = ‘1’ or TEMPE = ‘1’ or
IDA0EN = ‘1’
—
30
50
µA
Reference Bias Generator
40
Rev. 0.2
SILICON [ SILICON ]
