Si3220/25
Table 2. Recommended Operating Conditions
Parameter
Ambient Temperature
Ambient Temperature
Supply Voltage, Si3220/Si3225
Supply Voltage, Si3200
High Battery Supply Voltage, Si3200
Low Battery Supply Voltage, Si3200
Symbol
T
A
T
A
V
DD1
–V
DD4
V
DD
V
BATH
V
BATL
Test
Condition
K/F-Grade
B/G-Grade
Min*
0
–40
3.13
3.13
–15
–15
Typ
25
25
3.3/5.0
3.3/5.0
—
—
Max*
70
85
5.25
5.25
–99
V
BATH
Unit
o
C
o
C
V
V
V
V
*Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
Table 3. 3.3 V Power Supply Characteristics
(V
DD
, V
DD1
– V
DD4
=
3.3 V, T
A
=
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
V
DD1
–V
DD4
Supply
Current (Si3220/
Si3225)
Symbol
I
VDD1
–I
VDD4
Test Condition
Sleep mode, RESET = 0
Open (high-impedance)
Active on-hook standby
Forward/reverse active off-hook
Min
—
—
—
—
Typ
200
17
16
45 + I
LIM
+ ABIAS
47
26
Max
—
—
—
—
Unit
µA
mA
mA
mA
Forward/reverse active OHT
OBIAS = 4 mA, V
BAT
= –70 V
Ringing, V
RING
= 45 V
rms
, V
BAT
= –70 V,
Sine Wave, 1 REN load
2
—
—
—
—
mA
mA
Notes:
1.
All specifications are for a single channel based on measurements with both channels in the same operating state.
2.
See "3.14.4. Ringing Power Considerations" on page 53 for current and power consumption under other operating
conditions.
3.
Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional (V
DD
+ |V
BAT
|) x I
LOOP
term.
Rev. 1.2
5
SILABS [ SILICON LABORATORIES ]
