Si3460
4. Si3460-EVB Performance Characteristics
When implemented in accordance with the recommended external components and layout guidelines, the Si3460
controller enables the following typical performance characteristics in single-port PSE applications. Refer to the
Si3460-EVB applications note, schematics, and user's guide for more details.
Table 5. PSE Performance Characteristics
Parameter
Protection and Current Control
Overload current threshold
Overload current limit
Overload time
Output power at overload
Disconnect current
I
CUT
I
LIM
T
LIM
P
LIM
I
MIN
Disconnect current
All class levels
Output = 100
Ω
across V
OUT
Output = 100
Ω
across V
OUT
15,400/
V
OUT
400
50
15.4
5
340
425
60
17
7.5
400
450
75
—
10
mA
mA
ms
W
mA
Symbol
Conditions
Min
Typ
Max
Unit
Detection Specifications
2
Detection voltage
Minimum signature
resistance
Maximum signature
resistance
V
DET
Detection point 1 (w/ 10 kΩ source)
Detection point 2 (w/ 10 kΩ source)
Detection point 3 (w/ 10 kΩ source)
15
26.5
4.5
7.5
4.5
17
29
19
33
V
R
DETmin
R
DETmax
kΩ
kΩ
Classification Specifications
2
Classification voltage
Classification current limit
V
CLASS
I
CLASS
0 mA < ICLASS < 45 mA
Measured with 200
Ω
across V
OUT
Class 0
Class 1
Class 2
Class 3
Class 4
–20.5
55
0
8
16
25
35
–15.5
95
5
13
21
31
45
V
mA
mA
mA
mA
mA
mA
Classification current
region
3
I
CLASS_REGION
Notes:
1.
Typical specifications are based on an ambient operating temperature of 25 ºC and V
IN
= +12 V unless otherwise
specified.
2.
See “4. Si3460-EVB Performance Characteristics” for more details.
3.
Absolute classification current limits are programmable.
8
Preliminary Rev. 0.4
SILABS [ SILICON LABORATORIES ]
