S i4 13 3G
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Symbol
T
A
V
DD
V
∆
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
Test Condition
Min
–20
2.7
–0.3
Typ
25
3.0
—
Max
85
3.6
0.3
Unit
°C
V
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 3.0 V and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
DC Supply Voltage
Input Current
3
Input Voltage
3
Storage Temperature Range
Symbol
V
DD
I
IN
V
IN
T
STG
Value
–0.5 to 4.0
±10
–0.3 to V
DD
+0.3
–55 to 150
Unit
V
mA
V
o
C
Notes:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SENB, PWDNB and XIN.
4
Rev. 1.1
SILABS [ SILICON LABORATORIES ]
