Si8440/41/42/45
Table 6. Regulatory Information*
CSA
The Si84xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 V
reinforced insulation working voltage; up to 600 V
basic insulation working voltage.
RMS
RMS
RMS
60950-1: Up to 130 V
age.
reinforced insulation working voltage; up to 1000 V
basic insulation working volt-
RMS
VDE
The Si84xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 560 V
for basic insulation working voltage.
peak
UL
The Si84xx is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 2500 V isolation voltage for basic insulation.
RMS
*Note: Regulatory Certifications apply to 2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec.
For more information, see "5. Ordering Guide" on page 27.
Table 7. Insulation and Safety-Related Specifications
Value
Parameter
Symbol
Test Condition
Unit
WB
NB
SOIC-16 SOIC-16
1
L(IO1)
L(IO2)
8.0
8.0
4.9
4.01
0.008
mm
mm
mm
Nominal Air Gap (Clearance)
1
Nominal External Tracking (Creepage)
0.008
Minimum Internal Gap (Internal Clearance)
Tracking Resistance
(Proof Tracking Index)
PTI
ED
IEC60112
f = 1 MHz
600
600
V
RMS
0.040
0.019
mm
Erosion Depth
12
12
2
R
10
10
Resistance (Input-Output)
IO
2
C
2.0
4.0
2.0
4.0
pF
pF
Capacitance (Input-Output)
IO
3
C
Input Capacitance
I
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “6. Package Outline:
16-Pin Wide Body SOIC” and “8. Package Outline: 16-Pin Narrow Body SOIC”. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package.
UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance
and creepage limits as 3.9 mm minimum for the NB SOIC-16 package and 7.6 mm minimum for the WB SOIC-16
package.
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.
Rev. 1.5
15
SILICON [ SILICON ]
