Si8440/41/42/45
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Condition
Specification
Basic Isolation Group
Material Group
I
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
I-IV
I-III
I-II
I-II
RMS
RMS
RMS
RMS
Installation Classification
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Parameter
Symbol
Test Condition
Characteristic Unit
V
560
V peak
V peak
Maximum Working Insulation Voltage
Input to Output Test Voltage
IORM
Method b1
(V
x 1.875 = V , 100%
IORM
PR
V
1050
PR
Production Test, t = 1 sec,
m
Partial Discharge < 5 pC)
V
t = 60 sec
4000
2
V peak
Transient Overvoltage
IOTM
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T , V = 500 V
9
R
>10
S
S
IO
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values1
Max
Parameter
Symbol
Test Condition
Min Typ
Unit
WB
NB
SOIC-16 SOIC-16
T
—
—
—
—
150
220
150
210
°C
Case Temperature
S
= 100 °C/W (WB SOIC-16),
105 °C/W (NB SOIC-16),
JA
Safety input, output, or
supply current
I
mA
S
V = 5.5 V, T = 150 °C, T = 25 °C
I
J
A
Device Power
Dissipation
P
—
—
275
275
mW
2
D
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.
2. The Si844x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
16
Rev. 1.5
SILICON [ SILICON ]
