SVD2N60T
2A, 600V N-Channel MOSFET
GENERAL DESCRIPTION
2
SVD2N60T is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary
S-
1
3
1.Gate 2.Drain 3.Source
Rin
TM
structure DMOS technology. The improved planar stripe cell
and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
12
3
TO-220-3L
FEATURES
∗
∗
∗
∗
∗
2A,600V,R
DS(on)(typ.)
=4.0Ω@V
GS
=10V
Low gate charge
Low C
rss
Fast switching
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD2N60T
Package
TO-220-3L
Marking
SVD2N60T
Shipping
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
E
AR
T
J
Tstg
-55
-55
Value
600
±30
2.0
8
44
0.22
120
5.4
+150
+150
Unit
V
V
A
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.2
2009.07.09
Page 1 of 6
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