SVD2N60T
NOMENCLATURE
TYPICAL CHARACTERISTICS
Figure 1. On•Region Characteristics
Figure 2. Transfer Characteristics
100.00
10.00
1.00
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
4.5V
1.0
150
ć
Bottom: 4.5 V
25
•55
ć
ć
0.10
Note:
Note:
1. 250s Pulse Test
2. T =25
1.VGS=40V
2. 250 s pulse test
C
C
0.1
0.01
10
1
0
2
4
6
8
10
VDS Drain•source voltage[V]
VGS Gate•Source Voltage [V]
Figure 3. On•Resitance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
10.0
10.0
8.0
6.0
4.0
2.0
0.0
VGS=10V
VGS=20V
1.0
150
ć
25
ć
Note:
1.VGS=0V
2. 250 s pulse test
Note:TJ=25 C
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0
1.0
2.0
3.0
4.0
5.0
ID Drain Current [A]
VSD Source•Drain Voltage [V]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 3 of 6
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