SSF5508
Gate-to-Source reverse leakage
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
—
—
—
—
—
—
—
—
—
—
90
14
24
18.2
15.6
70.5
13.8
3150
300
240
-100
—
—
—
—
—
—
—
—
—
—
pF
nS
nC
V
GS
=-20V
I
D
=30A
V
DD
=30V
V
GS
=10V
V
DD
=30V
I
D
=2A ,R
L
=15Ω
R
G
=2.5Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Reverse Recovery Time
Forward Turn-on Time
.
.
Min.
—
—
—
－
－
Typ.
—
—
—
57
107
Max.
110
A
400
1.3
—
—
V
nS
nC
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=68A,V
GS
=0V
③
T
J
=25ْC,I
F
=68A
di/dt=100A/μs
③
V
SD
Diode Forward Voltage
t
rr
t
on
Q
rr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
①
Repetitive rating; pulse width limited by max junction temperature.
②
Test condition: L =0.3mH, ID = 57A, VDD = 27.5V
③
Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
EAS test circuit:
BV
dss
Gate charge test circuit:
©
Silikron Semiconductor CO.,LTD.
2009.12.26
Version : 1.0
page
2of5
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
