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STK12C68-LF45ITR 参数 Datasheet PDF下载

STK12C68-LF45ITR图片预览
型号: STK12C68-LF45ITR
PDF下载: 下载PDF文件 查看货源
内容描述: 8Kx8自动存储的nvSRAM [8Kx8 AutoStore nvSRAM]
分类和应用: 存储静态存储器
文件页数/大小: 20 页 / 526 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK12C68 (SMD5962-94599)
HSB OPERATION
The STK12C68 provides the HSB pin for controlling
and acknowledging the
STORE
operations. The HSB
pin is used to request a hardware
STORE
cycle.
When the HSB pin is driven low, the STK12C68 will
conditionally initiate a
STORE
operation after t
DELAY
;
an actual
STORE
cycle will only begin if a
WRITE
to
the
SRAM
took place since the last
STORE
or
RECALL
cycle. The HSB pin acts as an open drain
driver that is internally driven low to indicate a busy
condition while the
STORE
(initiated by any means)
is in progress.
SRAM READ
and
WRITE
operations that are in
If HSB is not used, it should be left unconnected.
PREVENTING STORES
The
STORE
function can be disabled on the fly by
holding HSB high with a driver capable of sourcing
30mA at a V
OH
of at least 2.2V, as it will have to
overpower the internal pull-down device that drives
HSB low for 20μs at the onset of a
STORE
. When
the STK12C68 is connected for AutoStore operation
(system V
CC
connected to V
CCX
and a 68μF capacitor
on V
CAP
) and V
CC
crosses V
SWITCH
on the way down,
the STK12C68 will attempt to pull HSB low; if HSB
doesn’t actually get below V
IL
, the part will stop try-
ing to pull HSB low and abort the
STORE
attempt.
progress when HSB is driven low by any means are
given time to complete before the
STORE
operation
is initiated. After HSB goes low, the STK12C68 will
continue
SRAM
operations for t
DELAY
. During t
DELAY
,
multiple
SRAM READ
operations may take place. If a
WRITE
is in progress when HSB is pulled low it will
be allowed a time, t
DELAY
, to complete. However, any
SRAM WRITE
cycles requested after HSB goes low
will be inhibited until HSB returns high.
The HSB pin can be used to synchronize multiple
STK12C68s while using a single larger capacitor. To
operate in this mode the HSB pin should be con-
nected together to the HSB pins from the other
STK12C68s. An external pull-up resistor to + 5V is
required since HSB acts as an open drain pull down.
The V
CAP
pins from the other STK12C68 parts can
be tied together and share a single capacitor. The
capacitor size must be scaled by the number of
devices connected to it. When any one of the
STK12C68s detects a power loss and asserts HSB,
the common HSB pin will cause all parts to request
a
STORE
cycle (a
STORE
will take place in those
STK12C68s that have been written since the last
nonvolatile cycle).
During any
STORE
operation, regardless of how it
was initiated, the STK12C68 will continue to drive
the HSB pin low, releasing it only when the
STORE
is
complete. Upon completion of the
STORE
operation
the STK12C68 will remain disabled until the HSB
pin returns high.
HARDWARE PROTECT
The STK12C68 offers hardware protection against
inadvertent
STORE
operation and
SRAM WRITE
s dur-
ing low-voltage conditions. When V
CAP
< V
SWITCH
, all
externally initiated
STORE
operations and
SRAM
WRITE
s are inhibited.
AutoStore can be completely disabled by tying V
CCX
to ground and applying + 5V to V
CAP
. This is the
AutoStore
Inhibit mode; in this mode,
STORE
s are only
initiated by explicit request using either the software
sequence or the HSB pin.
LOW AVERAGE ACTIVE POWER
The STK12C68 draws significantly less current
when it is cycled at times longer than 50ns. Figure 5
shows the relationship between I
CC
and
READ
cycle
time. Worst-case current consumption is shown for
both
CMOS
and
TTL
input levels (commercial tem-
perature range, V
CC
= 5.5V, 100% duty cycle on chip
enable). Figure 6 shows the same relationship for
WRITE
cycles. If the chip enable duty cycle is less
than 100%, only standby current is drawn when the
chip is disabled. The overall average current drawn
by the STK12C68 depends on the following items:
1)
CMOS
vs.
TTL
input levels; 2) the duty cycle of
chip enable; 3) the overall cycle rate for accesses;
4) the ratio of
READ
s to
WRITE
s; 5) the operating
temperature; 6) the V
cc
level; and 7) I/O loading.
Document Control #ML0008 Rev 0.7
February 2007
11