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U632H64BS2K25G1 参数 Datasheet PDF下载

U632H64BS2K25G1图片预览
型号: U632H64BS2K25G1
PDF下载: 下载PDF文件 查看货源
内容描述: PowerStore 8K ×8的nvSRAM [PowerStore 8K x 8 nvSRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 410 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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U632H64  
f
=
=
VIL, W = VIH)  
Read Cycle 1: Ai-controlled (during Read cycle: E  
G
tcR  
(1)  
Ai  
Address Valid  
ta(A)  
(2)  
DQi  
Output Data Valid  
Previous Data Valid  
Output  
tv(A)  
(9)  
Read Cycle 2: G-, E-controlled (during Read cycle: W = VIH)g  
tcR  
(1)  
Ai  
E
Address Valid  
ta(A)  
tPD  
(2)  
ta(E)  
(11)  
(3)  
tdis(E)  
(5)  
ten(E)  
(7)  
G
ta(G)  
(4)  
tdis(G)  
(6)  
ten(G) (8)  
DQi  
Output  
High Impedance  
tPU  
Output Data Valid  
(10)  
ACTIVE  
ICC  
STANDBY  
Symbol  
Alt. #1 Alt. #2  
Switching Characteristics  
Write Cycle  
No.  
Unit  
IEC  
Min. Max.  
12 Write Cycle Time  
tAVAV  
tAVAV  
tcW  
tw(W)  
tsu(W)  
tsu(A)  
tsu(A-WH)  
tsu(E)  
tw(E)  
25  
20  
20  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
13 Write Pulse Width  
tWLWH  
14 Write Pulse Width Setup Time  
15 Address Setup Time  
tWLEH  
tAVEL  
tAVEH  
tAVWL  
tAVWH  
tELWH  
16 Address Valid to End of Write  
17 Chip Enable Setup Time  
18 Chip Enable to End of Write  
19 Data Setup Time to End of Write  
20  
20  
20  
12  
0
tELEH  
tDVEH  
tEHDX  
tEHAX  
tDVWH  
tsu(D)  
th(D)  
20 Data Hold Time after End of Write tWHDX  
21 Address Hold after End of Write  
22 W LOW to Output in High-Zh, i  
23 W HIGH to Output in Low-Z  
tWHAX  
tWLQZ  
tWHQX  
th(A)  
0
tdis(W)  
ten(W)  
10  
5
August 15, 2006  
STK Control #ML0047  
5
Rev 1.1