SG50N06D2S, SG50N06D3S
Discrete IGBTs
(T
J
=25
o
C,
unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
min.
g
ts
I
C
=I
C90
; V
CE
=10V
Pulse test, t
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Reverse Diode (FRED)
Symbol
Test Conditions
I
F
=60A; T
VJ
=150
o
C
Pulse test, t 300us, duty cycle d
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=150
o
C
I
F
=I
C90
; V
GE
=0V; -di
F
/dt=100A/us; V
R
=540V
I
F
=1A; -di/dt=50A/us; V
R
=30V; T
J
=25
o
C
35
0.85
0.05
Inductive load, T
J
=25
o
C
I
C
=I
C90
; V
GE
=15V; L=100uH
V
CE
=0.8V
CES
; R
G
=R
off
=2.7
Remarks:Switching times may increase
for V
CE
(Clamp) 0.8V
CES'
higher T
J
or
increased R
G
Inductive load, T
J
=125
o
C
I
C
=I
C90
; V
GE
=15V; L=100uH
V
CE
=0.8V
CES
; R
G
=R
off
=2.7
Remarks:Switching times may increase
for V
CE
(Clamp)
increased R
G
0.8V
CES'
higher T
J
or
I
C
=I
C90
; V
GE
=15V; V
CE
=0.5V
CES
V
CE
=25V; V
GE
=0V; f=1MHz
300us, duty cycle
2%
4100
290
50
110
30
35
50
50
110
150
3.0
50
60
3.0
200
250
4.2
0.50
250
220
4.0
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
K/W
K/W
nC
pF
35
typ.
50
max.
S
Unit
(T
J
=25
o
C,
unless otherwise specified)
Characteristic Values
min.
typ.
max.
1.75
2.40
650
2.5
8.0
V
uA
mA
A
ns
K/W
Unit
V
F
I
R
I
RM
t
rr
R
thJC
2%; T
VJ
=25
C
o
SIRECT [ Sirectifier Global Corp. ]
