欢迎访问ic37.com |
会员登录 免费注册
发布采购

SGB-4333Z 参数 Datasheet PDF下载

SGB-4333Z图片预览
型号: SGB-4333Z
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 3 GHz有源偏置增益模块 [DC - 3 GHz Active Bias Gain Block]
分类和应用: 射频微波
文件页数/大小: 6 页 / 124 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
 浏览型号SGB-4333Z的Datasheet PDF文件第1页浏览型号SGB-4333Z的Datasheet PDF文件第3页浏览型号SGB-4333Z的Datasheet PDF文件第4页浏览型号SGB-4333Z的Datasheet PDF文件第5页浏览型号SGB-4333Z的Datasheet PDF文件第6页  
SGB-4333 DC-3GHz Active Bias Gain Block
Detailed Performance Table: Vcc=3V, Ic=56mA, T=25C, Z=50ohms
Symbol
G
OIP3
P1dB
IRL
ORL
S12
NF
Parameter
Small Signal Gain
Output 3rd Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Units
dB
dBm
dBm
dB
dB
dB
dB
17.3
13.4
21.1
5.0
100MHz
18.1
500MHz
17.8
26.5
12.0
15.6
12.7
21.5
3.5
850MHz
17.5
25.0
11.5
14.2
12.0
21.9
3.5
1950MHz
14.5
22.5
10.0
10.5
10.5
22.7
4.0
2400MHz
14.0
21.0
9.5
10.7
11.0
22.8
4.4
8.1
12.0
22.9
5.0
3500MHz
11.8
Pin Out Description
Pin #
1,2,4, 6,
7,8,11,
12,14
3
5
10
13
16
Back-
side
Function
NC
RFIN
GND
RFOUT
VBIAS
VCC
GND
Description
These are no connect pins. Leave them unconnected on the PC board.
RF input pin. A DC voltage should not be connected externally to this pin
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
RF Output pin. Bias is applied to the Darlington stage thru this pin.
This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
This is Vcc for the active bias circuit.
The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It
is also the main thermal path.
Simplified Device Schematic
16
15
14
13
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Absolute Maximum Ratings
Parameters
Value
120
5
0.4
-40 to +85
20
-40 to +150
+150
Unit
mA
V
W
ºC
dBm
ºC
ºC
1
2
Active
Bias
Current (Ic total)
12
11
10
Device Voltage (V
D
)
Power Dissipation
Operating Lead Temperature (T
L
)
RF Input Power
Storage Temperature Range
Operating Junction Temperature (T
J
)
3
4
9
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH’
j-l
5
6
7
8
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103087 Rev G