點晶科技股�½有限公司
SILICON TOUCH TECHNOLOGY INC.
42-DL213B
PAD DESCRIPTIONS
PAD NO.
1
2
3
4
PAD NAME
IN
VDD
OUT
VSS
DESCRIPTIONS
Input Pad(High Active)
Supply Voltage
Output Pad Sinking Current(Active Low)
Ground
DIE CONFIGURATION
(387.1, 422.5)
1.
2.
VDD
Center (66, 273.7)
IN
Center (248.9, 336.5)
Center (321.2, 66)
3.
OUT
4.
VSS
Center (76.2, 73.7)
(0, 0)
Die Size: 387.1um * 422.5um
Die Thickness: 15mil(=381um)
Pad Size: 90um * 90um
Unit：um
* Note:
SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical characteristics
and pad layouts.
SP-DL213B-A.003
-3-
Version
：
A.003
SITI [ SILICON TOUCH TECHNOLOGY INC. ]
