點晶科技股�½有限公司
SILICON TOUCH TECHNOLOGY INC.
42-DL213B
REQUIREMENTS FOR WAFER DELIVERY
Material： Silicon with P-Substrate
Diameter： 6 inches(≒15cm)
Thickness： 15 mils(≒381um)
Malfunctioned die：Marked with red ink or equivalent marking
HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION
(1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during
moving, storing and processing 42-DL213B.
(2) Process 42-DL213B in a clean room with proper temperature and humidity.
(3) Ground all working machines and workers wear anti-electrostatic ring to ground during
processing.
(4) Avoid contact 42-DL213Bwith bare hands .If unavoided, wear anti-electrostatic ring and use
anti-electrostatic tool to pick it up.
GUARANTED TEMPERATURE AND RETENTION CYCLE
(1) The device/wafer 42-DL213B should be stored in the nitrogenous chest. The conditions
suggested are as follows:
Temperature = 23±3℃
Relative Humidity = 50±10%
Minimum nitrogen inflow = 3 liters/minute
(2) If the device/wafer, 42-DL213B is incidentally exposed to the air, use it for manufacturing as
soon as possible.
(3) Under the storage environment specified in item (1), six-month safe storage period is
guaranteed.
SP-DL213B-A.003
-4-
Version
：
A.003
SITI [ SILICON TOUCH TECHNOLOGY INC. ]
