CXA3010Q
Read/Write Amplifier (with Built-in Filters) for FDDs
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Description
The CXA3010Q is a monolithic IC designed for use
with three-mode Floppy Disk Drives, and contains a
read circuit (with a four-mode filter system), a write
circuit, an erase circuit, and a supply voltage
detection circuit, all on a single chip.
Features
•
Single 5V power supply
•
Filter system can be switched among four modes:
1M, 1.6M/2M, which are each inner track/outer
track
•
Filter characteristics can be set to Chebyshev
(1dB ripple) for 1.6M, 2M/inner track only, and to
Butterworth for the other modes
•
A custom selection can be made between
Chebyshev (1dB ripple) and Butterworth for the
filter characteristics for 1.6M, 2M/inner track only
•
Permits customization of the fc ratio
•
Low preamplifier input conversion noise voltage of
2.0nV/
√
Hz (typ.) keeps read data output jitter to a
minimum
•
Preamplifier voltage gain can be switched between
39dB and 45dB
•
In inner track mode (OTF = Low), the voltage gain
is boosted by 3dB, making it possible to minimize
peak shift in inner tracks.
•
Time domain filter can be switched between two
modes: 1M, 1.6M/2M
•
Write current can be switched among three
modes: 1M/1.6M/2M. The inner/outer track current
ratio is fixed for each mode, but can be
customized.
•
Erase current can be set by an external resistor,
and remains constant. In addition, the current rise
time Tr and fall time Tf are determined according
to the head inductance and current. (Refer to
page 20.)
•
Damping resistor can be built in. Resistance can
be customized between 2kΩ and 15kΩ in 1kΩ
steps. A damping resistor can not be connected to
this IC, however.
•
Supply voltage detection circuit
32 pin QFP (Plastic)
Applications
Three-mode FDDs
Structure
Bipolar silicon monolithic IC
Absolute Maximum Ratings
(Ta = 25°C)
7.0
V
•
Supply voltage
V
CC
•
Operating temperature Topr –20 to +75
°C
•
Storage temperature
Tstg –65 to +150
°C
•
Allowable power dissipation
P
D
500
mW
•
Digital signal input pin Input voltage
–0.5 to V
CC
+ 0.3 V
•
Power ON output voltage applied V
CC
+ 0.3
V
•
Erase output voltage applied
V
CC
+ 0.3
V
•
Write head voltage applied
15
V
•
Write current
I
W
20
mAo-p
•
Erase current
I
E
30
mA
•
Power on output current
7
mA
Operating Conditions
Supply voltage
4.4 to 6.0
V
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94Y32A52-ST
SONY [ SONY CORPORATION ]
