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CXD2470R 参数 Datasheet PDF下载

CXD2470R图片预览
型号: CXD2470R
PDF下载: 下载PDF文件 查看货源
内容描述: 时序发生器帧读出CCD图像传感器 [Timing Generator for Frame Readout CCD Image Sensor]
分类和应用: 传感器图像传感器
文件页数/大小: 38 页 / 404 K
品牌: SONY [ SONY CORPORATION ]
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CXD2470R
Inverter I/O Characteristics for Oscillation
Item
Logical Vth
Input
voltage
Output
voltage
Feedback
resistor
Oscillation
frequency
Pins
OSCI
OSCI
Symbol
LVth
V
IH
V
IL
V
OH
V
OL
RFB
f
Conditions
(Within the recommended operating conditions)
Min.
Typ.
V
DD
d/2
0.7V
DD
d
0.3V
DD
d
Max.
Unit
V
V
V
V
0.4
500k
20
2M
5M
50
V
MHz
OSCO
OSCI,
OSCO
OSCI,
OSCO
Feed current where I
OH
= –3.6mA
Pull-in current where I
OL
= 2.4mA
V
IN
= V
DD
d or V
SS
V
DD
d – 0.8
Inverter Input Characteristics for Base Oscillation Clock Duty Adjustment
(Within the recommended operating conditions)
Item
Logical Vth
Input
voltage
Input
amplitude
CKI
Pins
Symbol
LVth
V
IH
V
IL
V
IN
fmax 50MHz sine wave
0.3
0.7V
DD
d
0.3V
DD
d
Conditions
Min.
Typ.
V
DD
d/2
Max.
Unit
V
V
V
Vp-p
Note)
Input voltage is the input voltage characteristics for direct input from an external source. Input amplitude
is the input amplitude characteristics in the case of input through a capacitor.
Switching Characteristics
Item
Symbol
TTLM
Rise time
TTMH
TTLH
TTML
Fall time
TTHM
TTHL
VCLH
Output noise voltage
VCLL
VCMH
VCML
VL to VM
VM to VH
VL to VH
VM to VL
VH to VM
VH to VL
Conditions
(V
H
= 15.0V, V
M
= GND, V
L
= –7.5V)
Min.
200
200
30
200
200
30
Typ.
350
350
60
350
350
60
Max.
500
500
90
500
500
90
1.0
1.0
1.0
1.0
Unit
ns
ns
ns
ns
ns
ns
V
V
V
V
Notes)
1. The MOS structure of this IC has a low tolerance for static electricity, so full care should be given for
measures to prevent electrostatic discharge.
2. For noise and latch-up countermeasures, be sure to connect a by-pass capacitor (0.1µF or more)
between each power supply pin (VH, VL) and GND.
3. To protect the CCD image sensor, clamp the SUB pin output at VH before input to the CCD image
sensor.
–6–