欢迎访问ic37.com |
会员登录 免费注册
发布采购

CXK581000ATM-70LL 参数 Datasheet PDF下载

CXK581000ATM-70LL图片预览
型号: CXK581000ATM-70LL
PDF下载: 下载PDF文件 查看货源
内容描述: 131072字×8位高速CMOS静态RAM [131072-word x 8-bit High Speed CMOS Static RAM]
分类和应用:
文件页数/大小: 12 页 / 290 K
品牌: SONY [ SONY CORPORATION ]
 浏览型号CXK581000ATM-70LL的Datasheet PDF文件第3页浏览型号CXK581000ATM-70LL的Datasheet PDF文件第4页浏览型号CXK581000ATM-70LL的Datasheet PDF文件第5页浏览型号CXK581000ATM-70LL的Datasheet PDF文件第6页浏览型号CXK581000ATM-70LL的Datasheet PDF文件第8页浏览型号CXK581000ATM-70LL的Datasheet PDF文件第9页浏览型号CXK581000ATM-70LL的Datasheet PDF文件第10页浏览型号CXK581000ATM-70LL的Datasheet PDF文件第11页  
CXK581000ATM/AYM/AM/AP
• Write cycle (2) :
CE1 control
t
WC
Address
t
AW
OE
t
AS
CE1
t
CW
CE2
t
WP
WE
t
DW
Data in
Data valid
t
DH
t
CW
t
WR1
(
3)
Data out
High impedance
• Write cycle (3) :
CE2 control
t
WC
Address
t
AW
OE
t
CW
CE1
t
AS
CE2
t
WP
WE
t
DW
Data in
Data valid
t
DH
t
OW
CW
t
WR1
(
3)
Data out
High impedance
1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
2 Do not apply the data input voltage of the opposite phase to the output while the I/O pin is in output condition.
3
t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
–7–