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CXK77B3610GB-7 参数 Datasheet PDF下载

CXK77B3610GB-7图片预览
型号: CXK77B3610GB-7
PDF下载: 下载PDF文件 查看货源
内容描述: 高速双CMOS同步静态RAM [High Speed Bi-CMOS Synchronous Static RAM]
分类和应用: 存储内存集成电路静态存储器信息通信管理时钟
文件页数/大小: 16 页 / 200 K
品牌: SONY [ SONY CORPORATION ]
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CXK77B3610GB
Mode Select Truth Table
Item
Register-Resister mode
Register-Flow Thru mode
Register-Latch mode
M1
L
L
H
M2
H
L
L
Electrical Characteristics
• DC and operating characteristics
Item
Input leakage current
Output leakage current
Operating power supply
current
Standby current
Output high voltage
Output low voltage
V
CC
= 3.3V, Ta = 25°C
Symbol
I
LI
I
LO
(V
CC
= 3.3V ± 10%, GND = 0V, Ta = 0 to 70°C)
Test conditions
V
IN
= GND to V
CC
V
O
= GND to V
CC
G = V
IH
Cycle = min.
Duty = 100%
I
OUT
= 0mA
ZZ
V
IH
I
OH
= –2.0mA
I
OL
= 2.0mA
2.4
Min.
–1
–10
Typ.
Max.
1
10
Unit
µA
µA
I
CC
I
SB
V
OH
V
OL
TBD
20
0.4
mA
mA
V
V
• I/O capacitance
Item
Input capacitance
Clock input capacitance
Output capacitance
Symbol
C
IN
C
CLK
C
OUT
Test conditions
V
IN
= 0V
V
IN
= 0V
V
OUT
= 0V
(Ta = 25°C, f = 1MHz)
Min.
Max.
5
8
8
Unit
pF
pF
pF
Note)
These parameters are sampled and are not 100% tested.
–5–