欢迎访问ic37.com |
会员登录 免费注册
发布采购

AM29DL322GB90EI 参数 Datasheet PDF下载

AM29DL322GB90EI图片预览
型号: AM29DL322GB90EI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同时操作闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 58 页 / 1293 K
品牌: SPANSION [ SPANSION ]
 浏览型号AM29DL322GB90EI的Datasheet PDF文件第1页浏览型号AM29DL322GB90EI的Datasheet PDF文件第2页浏览型号AM29DL322GB90EI的Datasheet PDF文件第4页浏览型号AM29DL322GB90EI的Datasheet PDF文件第5页浏览型号AM29DL322GB90EI的Datasheet PDF文件第6页浏览型号AM29DL322GB90EI的Datasheet PDF文件第7页浏览型号AM29DL322GB90EI的Datasheet PDF文件第8页浏览型号AM29DL322GB90EI的Datasheet PDF文件第9页  
DATA SHEET
Am29DL32xG
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
This product has been retired and is not recommended for designs. For new and current designs, S29JL032H (for TSOP packages) and S29PL032J (for FBGA packages) supersede
AM29DL32xG as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained
for reference and historical purposes only.”
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
Multiple bank architectures
— Three devices available with different bank sizes (refer
to Table 3)
256-byte Secured Silicon Sector
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Customer lockable:
One time programmable. Once
locked, data cannot be changed.
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
Package options
— 63-ball FBGA
— 48-ball FBGA
— 48-pin TSOP
— 64-ball Fortified BGA
Top or bottom boot block
Manufactured on 0.17 µm process technology
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast 70 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per
sector
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
Publication#
25686
Rev:
B
Amendment:
10
Issue Date:
December 4, 2006