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AM29DL324GT70EI 参数 Datasheet PDF下载

AM29DL324GT70EI图片预览
型号: AM29DL324GT70EI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同时操作闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 58 页 / 1293 K
品牌: SPANSION [ SPANSION ]
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D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter
JEDEC
t
AVAV
t
AVWL
Std
t
WC
t
AS
t
ASO
t
WLAX
t
AH
t
AHT
t
DVWH
t
WHDX
t
DS
t
DH
t
OEPH
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHDL
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
SR/W
t
WHWH1
t
WHWH1
t
WHWH2
t
WHWH1
t
WHWH1
t
WHWH2
t
VCS
t
RB
t
BUSY
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Byte
Programming Operation (Note 2)
Word
Accelerated Programming Operation,
Word or Byte (Note 2)
Sector Erase Operation (Note 2)
V
CC
Setup Time (Note 1)
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
Typ
Typ
Typ
Min
Min
Max
7
4
0.4
50
0
90
µs
sec
µs
ns
ns
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
30
35
15
45
45
0
45
0
20
50
Speed Options
70
70
90
90
0
15
50
120
120
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
50
ns
ns
ns
µs
0
0
0
35
30
0
5
December 4, 2006 25686B10
Am29DL32xG
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