D A T A
S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
Byte Mode
Word Mode
Typ (Note 1)
0.4
28
5
4
7
21
14
150
120
210
63
sec
42
Max (Note 2)
5
Unit
sec
sec
µs
µs
µs
Excludes system level
overhead (Note 5)
Comments
Excludes 00h programming
prior to erasure (Note 4)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 2.7 V (3.0 V for regulated devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
Input voltage with respect to V
SS
on all I/O pins
V
CC
Current
Min
–1.0 V
–1.0 V
–100 mA
Max
12.5 V
V
CC
+ 1.0 V
+100 mA
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP PIN AND FINE-PITCH BGA CAPACITANCE
Parameter Symbol
C
IN
Parameter Description
Input Capacitance
Test Setup
TSOP
V
IN
= 0
Fine-pitch BGA
TSOP
C
OUT
Output Capacitance
V
OUT
= 0
Fine-pitch BGA
TSOP
C
IN2
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Control Pin Capacitance
V
IN
= 0
Fine-pitch BGA
Typ
6
4.2
8.5
5.4
7.5
3.9
Max
7.5
5.0
12
6.5
9
4.7
Unit
pF
pF
pF
pF
pF
pF
DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
125°C
20
Years
Test Conditions
150°C
Min
10
Unit
Years
50
Am29DL32xG
25686B10 December 4, 2006