Am29LV640MH/L
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™
3.0 Volt-only Uniform Sector Flash Memory
with VersatileI/O™ Control
This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV640M H/L and is the factory-recommended migration path.
Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
VersatileI/O™ control
— Device generates data output voltages and tolerates
data input voltages on the DQ inputs/outputs as
determined by the voltage on the V
IO
pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 µm MirrorBit process
technology
SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-eight 32 Kword/64-Kbyte sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE FEATURES
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
HARDWARE FEATURES
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects first or last sector
regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
26191
Rev:
F
Amendment/3
Issue Date:
December 14, 2005
Refer to AMD’s Website (www.amd.com) for the latest information.
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