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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE
80/90
s
FEATURES
• 0.23
µ
m Process Technology
Simultaneous Read/Write operations
(dual
bank)
Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in
“s FEATURES”)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (1) (Package suffix : TN
Normal Bend Type, TR
Reversed Bend Type)
63-ball FBGA (Package suffix : PBT)
• Minimum 100,000 program/erase cycles
High performance
80 ns maximum access time
Sector erase architecture
Eight 4 Kword and sixty-three 32 Kword sectors in word mode
Eight 8 Kbyte and sixty-three 64 Kbyte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T
=
Top sector
B
=
Bottom sector
HiddenROM region
64 Kbyte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At V
IL
, allows protection of boot sectors, regardless of sector group protection/unprotection status
At V
ACC
, increases program performance
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output
(RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
(Continued)
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