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S29AL016M10BFI020 参数 Datasheet PDF下载

S29AL016M10BFI020图片预览
型号: S29AL016M10BFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ IMX 16位), 3.0伏只引导扇区闪存 [16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY]
分类和应用: 闪存内存集成电路
文件页数/大小: 59 页 / 2056 K
品牌: SPANSION [ SPANSION ]
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The device enters the CMOS standby mode when the CE# and RESET# pins are  
both held at V 0.3 V. (Note that this is a more restricted voltage range than  
V .) If CE# and RESET# are held at V , but not within V 0.3 V, the device  
will be in the standby mode, but the standby current will be greater. The device  
CC  
IH  
IH  
CC  
requires standard access time (t ) for read access when the device is in either  
CE  
of these standby modes, before it is ready to read data.  
If the device is deselected during erasure or programming, the device draws ac-  
tive current until the operation is completed.  
In the DC Characteristics table, I  
specification.  
and I  
represents the standby current  
CC4  
CC3  
Automatic Sleep Mode  
The automatic sleep mode minimizes Flash device energy consumption. The  
device automatically enables this mode when addresses remain stable for t  
+
ACC  
30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE#  
control signals. Standard address access timings provide new data when  
addresses are changed. While in sleep mode, output data is latched and always  
available to the system. I  
in the DC Characteristics table represents the  
CC4  
automatic sleep mode current specification.  
RESET#: Hardware Reset Pin  
The RESET# pin provides a hardware method of resetting the device to reading  
array data. When the system drives the RESET# pin to V for at least a period of  
IL  
t , the device immediately terminates any operation in progress, tristates all  
RP  
data output pins, and ignores all read/write attempts for the duration of the RE-  
SET# pulse. The device also resets the internal state machine to reading array  
data. The operation that was interrupted should be reinitiated once the device is  
ready to accept another command sequence, to ensure data integrity.  
Current is reduced for the duration of the RESET# pulse. When RESET# is held  
at V ±0.3 V, the device draws CMOS standby current (I  
). If RESET# is held  
SS  
CC4  
at V but not within V ±0.3 V, the standby current will be greater.  
IL  
SS  
The RESET# pin may be tied to the system reset circuitry. A system reset would  
thus also reset the Flash memory, enabling the system to read the boot-up firm-  
ware from the Flash memory.  
If RESET# is asserted during a program or erase operation, the RY/BY# pin re-  
mains a “0” (busy) until the internal reset operation is complete, which requires  
a time of t  
(during Embedded Algorithms). The system can thus monitor  
READY  
RY/BY# to determine whether the reset operation is complete. If RESET# is as-  
serted when a program or erase operation is not executing (RY/BY# pin is “1”),  
the reset operation is completed within a time of t  
(not during Embedded  
READY  
Algorithms). The system can read data t after the RESET# pin returns to V .  
RH  
IH  
Refer to the AC Characteristics tables for RESET# parameters and to Figure 14  
for the timing diagram.  
Output Disable Mode  
When the OE# input is at V , output from the device is disabled. The output pins  
IH  
are placed in the high impedance state.  
13  
S29AL016M  
S29AL016M_00A4 April 21, 2004