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S29GL128P11FFI020 参数 Datasheet PDF下载

S29GL128P11FFI020图片预览
型号: S29GL128P11FFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 71 页 / 1568 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume  
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to  
READ mode.  
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:  
„ Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.  
„ Write to an address in a sector different than the one specified during the Write-Buffer-Load command.  
„ Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”  
during the “write buffer data loading” stage of the operation.  
„ Write data other than the “Confirm Command” after the specified number of “data load” cycles.  
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 =  
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-  
Buffer-Abort reset” command sequence is required when using the write buffer Programming features in  
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable  
when a program operation is in progress.  
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices  
are capable of handling multiple write buffer programming operations on the same write buffer address range  
without intervening erases.  
Use of the write buffer is strongly recommended for programming when multiple words are to be  
programmed.  
22  
S29GL-P MirrorBitTM Flash Family  
S29GL-P_00_A3 November 21, 2006